View d882 datasheet:

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-126 Plastic-Encapsulate Transistors TO-126 D882 TRANSISTOR ( NPN ) FEATURES Power dissipation 1. EMITTER PCM : 1.25 W ( Tamb=25 ) 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PD Total Device Dissipation 1.25 W TJ Junction Temperature 150 Tstg Junction and Storage Temperature -55-150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100uA ,IE=0 40 V Collector

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