View s8550lt1 datasheet:

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM -0.5 A Collector-base voltage V(BR)CBO -40 V Unit mm Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V -40 V (BR)CBO Ic= -100 A, I =0 E Collector-emitter breakdown voltage V Ic=-1mA, I =0 -25 V (BR)CEO B Emitter-base breakdown voltage V -5 V (BR)EBO I = -100 A, I =0 E C Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 A Collector cut-off current I V = -20V, I =0 -0.1 CEO CE B A Emitter cut-off curr... See More ⇒

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