View s8550lt1 datasheet:

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Unit: mm Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V -40 V(BR)CBO Ic= -100A, I =0 ECollector-emitter breakdown voltage V Ic=-1mA, I =0 -25 V(BR)CEO BEmitter-base breakdown voltage V -5 V(BR)EBO I = -100A, I =0 E CCollector cut-off current ICBO VCB= -40V, IE=0 -0.1A Collector cut-off current I V = -20V, I =0 -0.1CEO CE B A Emitter cut-off curr

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