All Transistors. Equivalents Search

View 2n7002kg8 detailed specification:

2N7002KG8 Main Product Characteristics VDSS 60V RDS(on) 7.5ohm(max.) ID A SOT-363 Sc he mat i c d ia gra m Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating temperature Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V I 0.115 A D Drain Current... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2n7002kg8.pdf Design, MOSFET, Power

 2n7002kg8.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7002kg8.pdf Database, Innovation, IC, Electricity