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2n7002kg8.pdf datasheet:

2n7002kg82n7002kg8

2N7002KG8 Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A SOT-363 Sc he mat i c d ia gra m Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V I 0.115 A DDrain Current

 

Keywords - ALL TRANSISTORS DATASHEET

 2n7002kg8.pdf Design, MOSFET, Power

 2n7002kg8.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7002kg8.pdf Database, Innovation, IC, Electricity

 

 
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