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View ssf18n50f detailed specification:

SSF18N50F Main Product Characteristics VDSS 500V RDS(on) 0.22ohm(typ.) ID 18A Marking and pin TO220F Schematic diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating temperature Description These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies Absolute max Rating Symbol Parameter Max. Units ID @ TC =... See More ⇒

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