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BSS138 N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 50 V Gate- Source Voltage VGS +20 V Drain Current (continuous) IDR 220 mA Drain Current (pulsed) IDRM 880 mA THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS Symbol Max Unit Characteristic Total Device Dissipation 225 mW TA=25 PD Derate above25 1.8 mW/ R Thermal Resistance Junction to Ambient JA 350 /W Junction and Storage Temperature TJ,Tstg 150 ,-55to+150 www.slkormicro.com 1 BSS138 ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA=25 unless otherwi... See More ⇒

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