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View stb13007dt4 detailed specification:

STB13007DT4 High voltage fast-switching NPN power transistor General features Improved specification Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode 3 Low spread of dynamic parameters 1 Minimum lot-to-lot spread for reliable operation D2PAK Very high switching speed (T0-263) Fully characterized at 125 C Large RBSOA In compliance with the 2002/93/EC European Directive Internal schematic diagram Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. Applications Electronic transformers for halogen lamps Switch mode power supplies Order codes Part ... See More ⇒

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