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View 2sa1832 detailed specification:

2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Complementary to 2SC4738 Small package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Base current IB -30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55 125 C JEDEC Note Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIB... See More ⇒

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