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View 2sa1832ft detailed specification:

2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -50 V High current I = -150 mA (max) C High h h = 120 to 400 FE FE Excellent h linearity FE h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SC4738F Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Base current IB -30 mW JEDEC Collector power dissipation PC 100 mW JEITA Junction temperature Tj 125 C TOSHIBA 2-1B1A Storage temperature range Tstg -55 to 125 C Marking Type Name hFE Rank S Y Electrical Characteristics (Ta = = 25 C) = = Characteristics Symbo... See More ⇒

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