View 2sa1832ft datasheet:

2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -50 V High current: I = -150 mA (max) C High h : h = 120 to 400 FE FE Excellent h linearity FE: h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SC4738F Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -150 mA Base current IB -30 mWJEDEC Collector power dissipation PC 100 mWJEITA Junction temperature Tj 125 C TOSHIBA 2-1B1AStorage temperature range Tstg -55 to 125 C Marking Type Name hFE Rank S Y Electrical Characteristics (Ta == 25C) ==Characteristics Symbo

Keywords - ALL TRANSISTORS DATASHEET

 2sa1832ft.pdf Design, MOSFET, Power

 2sa1832ft.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1832ft.pdf Database, Innovation, IC, Electricity