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2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.1 (typ.) (ON) High forward transfer admittance Y 7.0 S (typ.) fs = Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k ) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 9 A Drain current Pulse (Note 1) IDP 27 A 1. GATE 2. DRAIN (HEAT SINK) Drain power dissipation (Tc = 25 C) PD 150 W 3. SOURCE Single pulse avalanche energy EAS 663 mJ (Note 2) JEDEC Avalanche current IAR 9 A JEITA SC-65 Repetitive avalanche energy (Not... See More ⇒

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