View 2sk2611 datasheet:

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.1 (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS DMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 900 VDrain-gate voltage (RGS = 20 k) VDGR 900 V Gate-source voltage VGSS 30 VDC (Note 1) ID 9 ADrain current Pulse (Note 1) IDP 27 A 1. GATE 2. DRAIN (HEAT SINK) Drain power dissipation (Tc = 25C) PD 150 W 3. SOURCE Single pulse avalanche energy EAS 663 mJ(Note 2)JEDEC Avalanche current IAR 9 AJEITA SC-65Repetitive avalanche energy (Not

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