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HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50 V, IC = -150 mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V JEDEC Collector current IC -150 mA JEITA Base current IB -30 mA TOSHIBA 2-3N1A Collector power dissipation PC* 300 mW Weight 0.015 g (typ.) Junction temperature Tj 125 C Storage temperature range Tstg -55 125 C Note Using continuously under heavy loads (e.g. the application of high temperature/current/vol... See More ⇒

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