View hn1a01f datasheet:

HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit: mmAudio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = -50 V, IC = -150 mA (max) High hFE: hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VJEDEC Collector current IC -150 mAJEITA Base current IB -30 mATOSHIBA 2-3N1A Collector power dissipation PC* 300 mWWeight: 0.015 g (typ.) Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/vol

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