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hn1a01fe-y_hn1a01fe-grhn1a01fe-y_hn1a01fe-gr

HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 to 400 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Base current IB -30 mA Collector power dissipation PC* 100 mW Junction temperature Tj 150 C JEDEC JEITA Storage temperature range Tstg -55 to 150 C TOSHIBA 2-2N1A Note Using continuously under heavy loads (e.g. the application of high Weight 3.0mg (typ.) temperature/current/vol... See More ⇒

 

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