hn1a01fe-y hn1a01fe-gr.pdf datasheet:

HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -150 mABase current IB -30 mACollector power dissipation PC* 100 mWJunction temperature Tj 150 C JEDEC JEITA Storage temperature range Tstg -55 to 150 C TOSHIBA 2-2N1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 3.0mg (typ.) temperature/current/vol