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hn1a01fuhn1a01fu

HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FU Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current V =-50V, I =-150mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I =-0.1mA) / h (I =-2mA) = 0.95 (typ.) FE C FE C Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V JEDEC Collector current IC -150 mA JEITA Base current IB -30 mA TOSHIBA 2-2J1A Weight 6.8mg Collector power dissipation PC* 200 mW Junction temperature Tj 125 C Storage temperature range Tstg -55 125 C Note Using continuously under heavy loads (e.g. the application of high temperature/current/volt... See More ⇒

 

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