View hn1a01fu datasheet:

HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : V =-50V, I =-150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I =-0.1mA) / h (I =-2mA) = 0.95 (typ.) FE C FE CAbsolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VJEDEC Collector current IC -150 mAJEITA Base current IB -30 mATOSHIBA 2-2J1A Weight: 6.8mg Collector power dissipation PC* 200 mWJunction temperature Tj 125 C Storage temperature range Tstg -55~125 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/volt

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