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SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit mm 2.5V drive 2.1 0.1 Low on-resistance Ron = 480m (max) (@VGS = -4 V) 1.7 0.1 Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) 1 3 2 Characteristic Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS 12 V DC ID -1 Drain current A Pulse IDP -2 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 1 Gate Channel temperature Tch 150 C 2 Source 3 Drain Storage temperature range Tstg -55 150 C UFM Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operatin... See More ⇒

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