View ssm3j111tu datasheet:

SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = -4 V) 1.70.1Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 132Characteristic Symbol Rating UnitDrain-Source voltage VDS -20 VGate-Source voltage VGSS 12 VDC ID -1 Drain current A Pulse IDP -2 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 1: Gate Channel temperature Tch 150 C 2: Source 3: Drain Storage temperature range Tstg -55~150 C UFM Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operatin

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