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TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit mm Portable Equipment Applications 0.25 0.05 0.8 0.05 M A 8 5 Small footprint due to a small and thin package 0.2 0 0.2 Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer admittance Yfs = 46 S (typ.) 0.55 4 1 Low leakage current IDSS = 10 A (max) (VDS = 30 V) A Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) 3.5 0.2 Absolute Maximum Ratings (Ta = 25 C) 0.05 S S 1 4 Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V 2.75 0.2 Drain-gate voltage (RGS = 20 k ) VDGR 30 V 0.8 0.1 Gate-source voltage VGSS 20 V 8 5 1,2,3 SOURCE 4 GATE DC (Note 1) ID 25 5,6,7,8 DRAIN Drain current A Pulsed (Note 1)... See More ⇒

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