View tpcm8006 datasheet:

TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.250.050.80.05 M A8 5 Small footprint due to a small and thin package 0.200.2 Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 46 S (typ.) 0.5541 Low leakage current: IDSS = 10 A (max) (VDS = 30 V) A Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) 3.50.2Absolute Maximum Ratings (Ta = 25C) 0.05 SS1 4Characteristic Symbol Rating UnitDrain-source voltage VDSS 30 V2.750.2Drain-gate voltage (RGS = 20 k) VDGR 30 V0.80.1Gate-source voltage VGSS 20 V 8 5 1,2,3:SOURCE 4:GATE DC (Note 1) ID 255,6,7,8:DRAIN Drain current A Pulsed (Note 1)

Keywords - ALL TRANSISTORS DATASHEET

 tpcm8006.pdf Design, MOSFET, Power

 tpcm8006.pdf RoHS Compliant, Service, Triacs, Semiconductor

 tpcm8006.pdf Database, Innovation, IC, Electricity