View s8550l s8550h s8550j detailed specification:
R UMW UMW S8550 SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER Complimentary to S8050 3. COLLECTOR Collector current IC=0.5A MARKING 2TY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO -40 V IC = -100 A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100 A, IC=0 Collector cut-off... See More ⇒
Keywords - ALL TRANSISTORS SPECS
s8550l s8550h s8550j.pdf Design, MOSFET, Power
s8550l s8550h s8550j.pdf RoHS Compliant, Service, Triacs, Semiconductor
s8550l s8550h s8550j.pdf Database, Innovation, IC, Electricity
