View s8550l s8550h s8550j datasheet:

RUMW UMW S8550SOT-23 Plastic-Encapsulate TransistorsSOT-23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER Complimentary to S8050 3. COLLECTOR Collector current: IC=0.5A MARKING : 2TY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO -40 VIC = -100A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 VEmitter-base breakdown voltage V(BR)EBO -5 VIE= -100A, IC=0 Collector cut-off

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