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View p1403cv detailed specification:

P1403CV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14.6m @VGS = 10V 30V 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 12 TA = 25 C 11 ID Continuous Drain Current1 TA = 70 C 7 A IDM 45 Pulsed Drain Current2 IAS Avalanche Current 29 EAS Avalanche Energy L = 0.1mH 40 mJ TA = 25 C 2.5 PD Power Dissipation W TA = 70 C 1 TJ, TSTG Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RqJA 50 C / W 1 limited by maximum junction temperature. 2 Limited by package. Ver 1.0 1 2012/7/5 P1403CV N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Other... See More ⇒

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