View bss138 detailed specification:
UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. FEATURES * RDS(ON)=0.7 @ VGS=10V * RDS(ON)=1 @ VGS=4.5V * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BSS138L-AE2-R BSS138G-AE2-R SOT-23-3 S G D Tape Reel BSS138L-AL3-R BSS138G-AL3-R SOT-323 S G D Tape Reel Note Pin Assignment G Gate D Drain S Source MARKING www.uni... See More ⇒
Keywords - ALL TRANSISTORS SPECS
bss138.pdf Design, MOSFET, Power
bss138.pdf RoHS Compliant, Service, Triacs, Semiconductor
bss138.pdf Database, Innovation, IC, Electricity
