View bss138 datasheet:

UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology andfeatures low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. FEATURES * RDS(ON)=0.7 @ VGS=10V * RDS(ON)=1 @ VGS=4.5V * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL 3.Drain2.Gate1.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BSS138L-AE2-R BSS138G-AE2-R SOT-23-3 S G D Tape ReelBSS138L-AL3-R BSS138G-AL3-R SOT-323 S G D Tape ReelNote: Pin Assignment: G: Gate D: Drain S: Source MARKING www.uni

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