View mje13003-p detailed specification:
UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ Tc=100 C * Inductive switching matrix 0.5 1.5 Amp, 25 and 100 C Typical tc = 290ns @ 1A, 100 C. * 700V blocking capability APPLICATIONS * Switching regulator s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 MJE13003L-P-x-T60-K MJE13003G-P-x-T60-K TO-126 B C E Bulk MJE13003L-P-x-T6C-A-K MJE13003G-P-x-T6C-A-K TO-126C E C B Bulk MJE13003L-P-x-T6C-... See More ⇒
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mje13003-p.pdf Design, MOSFET, Power
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