View mje13003-p datasheet:

UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ Tc=100C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100C Typical tc = 290ns @ 1A, 100C. * 700V blocking capability APPLICATIONS * Switching regulators, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits ORDERING INFORMATION Ordering Number Pin Assignment Package PackingLead Free Halogen-Free 1 2 3 MJE13003L-P-x-T60-K MJE13003G-P-x-T60-K TO-126 B C E BulkMJE13003L-P-x-T6C-A-K MJE13003G-P-x-T6C-A-K TO-126C E C B BulkMJE13003L-P-x-T6C-

Keywords - ALL TRANSISTORS DATASHEET

 mje13003-p.pdf Design, MOSFET, Power

 mje13003-p.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje13003-p.pdf Database, Innovation, IC, Electricity