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View sihp18n50c detailed specification:

SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 100 % Avalanche Tested RDS(on) ( )VGS = 10 V 0.225 High Peak Current Capability Qg (Max.) (nC) 76 dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 Improved trr/Qrr Configuration Single Improved Gate Charge D High Power Dissipations Capability Compliant to RoHS Directive 2002/95/EC TO-220AB G S D S G N-Channel MOSFET ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP18N50C-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 30 TC = 25 C 18 Continuous Drain Current (TJ = 150 C)a VGS at 10 V ID TC = 100 C 11 A Pulsed Drain Currentb IDM 72 Linear Derating Factor TO-220AB 1.8 W/ C Single Pulse Av... See More ⇒

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