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WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S S S resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. SOP-8L Features V = 100V, I = 9.5A DS D R ... See More ⇒

 

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 wms175n10lg4.pdf Design, MOSFET, Power

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