View mmbt9013lt1 detailed specification:
RoHS MMBT9013LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. 1.BASE Complement to 9012 2.EMITTER Collector Current Ic=500mA 2.4 3.COLLECTOR 1.3 High Total Power Dissipation Pc=225mW Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage V VCEO 20 V Emitter-Base Voltage VEBO 5 mA Collector Current Ic 500 o Collector Dissipation Ta=25 C* PD mW 225 O Tj Junction Temperature 150 C O Tstg Storage Temperature -55 150 C o Electrical Characteristics (Ta=25 C) Parameter Symbol MIN. TYP. MAX. Unit Condition 40 V BVCBO IC=100 A IE=0 Collector-Base Breakdown Voltage 20 V BVCEO IC=1mA IB=0 Collector-Emitter Breakdown Voltage# BVEBO 5 V IE=100 A IC=0 Emitter-Base Breakdown Voltage... See More ⇒
Keywords - ALL TRANSISTORS SPECS
mmbt9013lt1.pdf Design, MOSFET, Power
mmbt9013lt1.pdf RoHS Compliant, Service, Triacs, Semiconductor
mmbt9013lt1.pdf Database, Innovation, IC, Electricity
