View mmbt9013lt1 datasheet:

RoHS MMBT9013LT1NPN EPITAXIAL SILICON TRANSISTOR SOT-2331W OUTPUT AMPLIFIER OF PORTABLE1RADIOS IN CLASSB PUSH-PULL OPERATION21.1.BASE Complement to 90122.EMITTER Collector Current :Ic=500mA2.43.COLLECTOR1.3 High Total Power Dissipation Pc=225mW Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage VCBO 40 VCollector-Emitter VoltageVVCEO 20VEmitter-Base Voltage VEBO5mACollector Current Ic500oCollector Dissipation Ta=25 C* PD mW225OTjJunction Temperature 150COTstgStorage Temperature -55~150CoElectrical Characteristics (Ta=25 C)Parameter Symbol MIN. TYP. MAX. Unit Condition40 VBVCBO IC=100 A IE=0Collector-Base Breakdown Voltage20 VBVCEO IC=1mA IB=0 Collector-Emitter Breakdown Voltage#BVEBO 5 VIE=100 A IC=0Emitter-Base Breakdown Voltage

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