View 2n7002ta 2n7002tc detailed specification:
2N7002 60V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 7.5 @ VGS= 10V 0.5 60 7.5 @ VGS= 5V 0.05 Description A small signal MOSFET for general purpose switching applications. Features D Fast switching speed Low gate drive capability SOT23 package G Applications S General switching applications Ordering information S Device Reel size Tape width Quantity per reel (inches) (mm) D 2N7002 7 8 3,000 G Device marking 702 Top view Issue 5 - October 2007 1 www.zetex.com Zetex Semiconductors plc 2007 2N7002 Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDS 60 V Continuous drain current at Tamb=25 C ID 115 mA Pulsed drain current IDM 800 mA Gate-source voltage VGS 40 V Power dissipation at Tamb =25 C Ptot 330 mW Operating and storage temperature range Tj, Tstg -55 to +150 C ... See More ⇒
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