All Transistors. Datasheet

 

View 18n50a datasheet:

18n50a18n50a

GOFORD18N50ADescription Features VDSS RDS(ON) ID @10V (typ) 18A500V 0.22 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units TO-220 TO-220F V Drain-Source Voltage 500 V DSSV Gate-Source Voltage 30 V GSSTC = 25 18 18* A I Continuous Drain Current DT = 100 11.4 11.4* A C I Pulsed Drain Current note1 72 72* A DMEAS Single Pulsed Avalanche Energy note2 500 mJ dv/dt Peak Diode Recovery Energy note3 4.5 V/ns Power Dissipation TC = 25 173 50 W P DLinear Derating Factor T > 25 1.39 0.4 W/ CR Thermal Resistance, Junction to Case 0.72 2.5 /W JCT , T Operating and

 

Keywords - ALL TRANSISTORS DATASHEET

 18n50a.pdf Design, MOSFET, Power

 18n50a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 18n50a.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.