View 24n50a datasheet:

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX24N50AFeatures500 Volts Ultrafast body diode24 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability230 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL Reverse polarity available upon requestENHANCEMENT MODEPOWER MOSFETMaximum Ratings @ 25C (unless otherwise specified)DESCRIPTION SYMBOL MAX. UNITDrain-to-Source Breakdown Voltage (Gate Shorted to Source) BVDSS 500 Volts@ T 25CJDrain-to-Gate Breakdown Voltage @ T 25C, R = 1 M BVDGR 500 VoltsJ GSContinuous Gate-to-Source Voltage VGS +/-20 VoltsTransient Gate-to-Source Voltage VGSM +/-30 VoltsContinuous Drain Current Tj= 25C ID25 24 AmpsTj=I

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