View 2n2150 2n2151 datasheet:

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/277 Devices Qualified Level 2N2150 2N2151 JANTX MAXIMUM RATINGS (TC = 250C unless otherwise noted) Ratings Symbol Value Units Collector-Emitter Voltage 100 Vdc VCEO Collector-Base Voltage 150 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Base Current I 2.0 Adc B Collector Current 2.0 Adc IC Total Power Dissipation @ Tc = +1000C(1) PT 30 W 0Operating & Storage Junction Temperature Range -65 to +200 C TJ Tstg ,THERMAL CHARACTERISTICS TO-111* Characteristics Symbol Max. Unit 0Thermal Resistance, Junction-to-Case 3.3 C/W RJC 1) Derate linearly @ 0.3 W/0C for TC > +1000C *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = +250C) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 1

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