View 2n2906aua datasheet:

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907AJANSD 10K Rads (Si) 2N2906AL 2N2907ALJANSP 30K Rads (Si) 2N2906AUA 2N2907AUAJANSL 50K Rads (Si) 2N2906AUB 2N2907AUBJANSR 100K Rads (Si) 2N2906AUBC 2N2907AUBCABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value UnitCollector-Emitter Voltage VCEO 60 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 5.0 VdcCollector Current IC 600 mAdcTO-18 (TO-206AA) 2N2906A, 2N2907A Total Power Dissipation @ TA = +25C PT (1) 0.5 WOperating & Storage Junction Temperature Range Top, Tstg -65 to

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