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View 2n2907ahr datasheet:

2n2907ahr2n2907ahr

2N2907AHRHi-Rel 60 V, 0.6 A PNP transistorDatasheet - production dataFeaturesParameter Value123BVCEO 60 V TO-18IC (max) 0.6 A33HFE at 10 V - 150 mA > 10041122 Hermetic packagesLCC-3 UB ESCC and JANS qualifiedPin 4 in UB is connected to the metallic lid. European preferred part list EPPLFigure 1. Internal schematic diagram DescriptionThe 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.Table 1. Device summaryQualification Agency Device Package Radiation level EPPLsystem

 

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