View 2n3055 datasheet:

isc Silicon NPN Power Transistor 2N3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type MJ2955Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 70 VCERV Collector-Emitter Voltage 60 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 15 ACI Base Current 7 ABP Collector Power Dissipation@T =25 115 WC COperating and Storage JunctionT T -65~+150 J, stgTemperature RangeTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to

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