View 2n3055 datasheet:

Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3055 DESCRIPTION With TO-3 package Complement to type MJ2955 DC Current Gain -hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area APPLICATIONS Designed for generalpurpose switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 7 APC Collector power dissipation TC=25 115 WTj Junction temperature 150 Tstg Storage temperature -65~200 THERM

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