View 2n3055 mj2955 datasheet:

2N3055(NPN), MJ2955(PNP)Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral-purpose switching and amplifier applications.Featureshttp://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage -15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 AdcPOWER TRANSISTORS Excellent Safe Operating AreaCOMPLEMENTARY SILICON Pb-Free Packages are Available*60 VOLTS, 115 WATTSMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 60 VdcCollector-Emitter Voltage VCER 70 VdcTO-204AA (TO-3)CASE 1-07Collector-Base Voltage VCB 100 VdcSTYLE 1Emitter-Base Voltage VEB 7 VdcCollector Current - Continuous IC 15 AdcBase Current IB 7 AdcTotal Power Dissipation @ TC = 25C PD 115 WMARKING DIAGRAMDerate Above 25C 0.657 W/COper

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