View 2n3226 datasheet:

isc Silicon NPN Power Transistor 2N3226DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% testMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for power amplifier and switching circuitsapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 35 VCBOV Collector-Emitter Voltage 35 VCERV Collector-Emitter Voltage 35 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 5 ACP Collector Power Dissipation@T =25 75 WC COperating and Storage JunctionT T -65~+150 J, stgTemperature RangeTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.17 /Wth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Po

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