View 2n3636ub datasheet:

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637LJANSP 30K Rads (Si) 2N3634UB 2N3635UB 2N3636UB 2N3637UBJANSL 50K Rads (Si) JANSR 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) 2N3634* 2N3636*Parameters / Test Conditions Symbol Unit 2N3635* 2N3637*Collector-Emitter Voltage VCEO 140 175 VdcCollector-Base Voltage VCBO 140 175 VdcEmitter-Base Voltage VEBO 5.0 5.0 VdcTO-5* Collector Current IC 1.0 1.0 Adc2N3634L, 2N3635L Total Power Dissipation @ TA = +25C 1.0 W 2N3636L, 2N3637L @ TC = +25C PT **

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