View 2n3904a datasheet:

SEMICONDUCTOR 2N3904ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=50nA(Max.), IBL=50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=30V, VEB=3V. GC 3.70 MAXDLow Saturation Voltage D 0.45E 1.00: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.F 1.27G 0.85Low Collector Output CapacitanceH 0.45_: Cob=4pF(Max.) @VCB=5V. HJ 14.00 + 0.50K 0.55 MAXF FComplementary to 2N3906A.L 2.30M 0.45 MAXN 1.001 2 31. EMITTER2. BASEMAXIMUM RATING (Ta=25 )3. COLLECTORCHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 60 VTO-92VCEOCollector-Emitter Voltage 40 VVEBOEmitter-Base Voltage 6 VICCollector Current 200 mAIBBase Current 50 mA625 mWTa=25Collector PowerPCDissipation1.5 WTc=25TjJunction Temperature 1

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