All Transistors. Datasheet

 

View 2n3904u datasheet:

2n3904u2n3904u

Plastic-Encapsulate Transistors TRANSISTOR (NPN)FEATURES U Compliment to 2N3906 Low current Low voltage MARKING: 1A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55~150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC=10A,IE=0 60 VCollector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 VEmitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 6 VCollector cut-off current ICBO VCB=30V,IE=0 0.05 A Emitter cut-off current IEBO VEB=6V,IC=0 0.05 A Collector u

 

Keywords - ALL TRANSISTORS DATASHEET

 2n3904u.pdf Design, MOSFET, Power

 2n3904u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3904u.pdf Database, Innovation, IC, Electricity

 

 
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