View 2n4036 datasheet:

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR TRANSISTOR 2N4036TO-39General Purpose TransistorABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 65 VCollector -Base Voltage VCBO 90 VEmitter Base Voltage VEBO 7.0 VBase Current IB 0.5 ACollector Current -Continuous IC 1.0 APower Dissipation @ Tc=25 deg C PD 5.0 WLinear Derating Factor 28.6 mW/deg CPower Dissipation @ Ta=25 deg C PD 1.0 WLinear Derating Factor 5.72 mW/deg COperating & Storage Junction Tj, Tstg -65 to +200 deg CTemperature RangeLead Temperature 1/16" from Case TL 230 deg Cfor 10 SecondsThermal ResistanceJunction to Case Rth (j-c) 35 deg C/WELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITCollector -Emitter Voltag

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