View 2n4401 datasheet:

2N4401General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO 40 Vdc1Collector - Base Voltage VCBO 60 VdcEMITTEREmitter - Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 600 mAdcTotal Device Dissipation PD@ TA = 25C 625 mWDerate above 25C 5.0 mW/CTO-92CASE 29Total Device Dissipation PDSTYLE 1@ TC = 25C 1.5 WDerate above 25C 12 mW/C11Operating and Storage Junction TJ, Tstg -55 to C2233Temperature Range +150STRAIGHT LEAD BENT LEADTHERMAL CHARACTERISTICSBULK PACK TAPE & REELAMMO PACKCharacteristic Symbol Max UnitThermal Resistance, Junction-to-Ambient RqJA 200 C/WMARKING DIAGRAMThermal Resistance, Junction-to-Case RqJC 83.3 C/WStresses exceeding M

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