All Transistors. Datasheet

 

View 2n5401 datasheet:

2n54012n5401

2N5401PNP Silicon TransistorDescription PIN Connection General purpose amplifier E High voltage application Features B High collector breakdown voltage : VCBO = -160V, VCEO = -160V Low collector saturation voltage : CVCE(sat)=-0.5V(MAX.) TO-92 Complementary pair with 2N5551 Ordering Information Type NO. Marking Package Code 2N5401 TO-92 2N5401 : Year & Week Code Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-Base voltage VCBO -160 VCollector-Emitter voltage VCEO -160 VEmitter-Base voltage VEBO -5 VCollector current IC -600 mACollector dissipation PC 625 mWJunction temperature Tj 150 C Storage temperature Tstg -55~150 C KSD-T0A076-000 1EBC 2N5401Electrical Characteristics (Ta=25C) Characteristic Symbol Test Condition Min. Typ. Max. UnitColle

 

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